IPA60R180C7XKSA1

MOSFET HIGH POWER_NEW

IPW60R180C7XKSA1

MOSFET HIGH POWER_NEW

IHW30N65R5XKSA1

IGBT 晶体管 Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC

IKW30N65WR5XKSA1

IGBT 晶体管 The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno

IKW30N65ES5XKSA1

IGBT 晶体管 TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

IPA60R120C7XKSA1

MOSFET HIGH POWER_NEW

IKW50N65WR5XKSA1

IGBT 晶体管 The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno

IGW75N65H5XKSA1

IGBT 晶体管 Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e

SMBT3906UE6327HTSA1

双极晶体管 - 双极结型晶体管(BJT) PNP Silicon Switch TRANSISTOR

SMBT3904E6327XT

双极晶体管 - 双极结型晶体管(BJT) AF GP BJT NPN 40V 0.2A

SMBT3906E6327HTSA1

双极晶体管 - 双极结型晶体管(BJT) AF GP BJT PNP 40V 0.2A

SPW47N60CFD

MOSFET N-Ch 600V 46A TO247-3 CoolMOS CFD

SGW25N120

IGBT 晶体管 FAST IGBT NPT TECH 1200V 25A

SKW30N60

IGBT 晶体管 FAST IGBT NPT TECH 600V 30A

SMBT3906SH6327XTSA1

双极晶体管 - 双极结型晶体管(BJT) AF TRANSISTOR

SMBT 3904 E6433

双极晶体管 - 双极结型晶体管(BJT) NPN Silicon Switch TRANSISTOR