IPA60R060C7XKSA1

MOSFET HIGH POWER_NEW

IKW50N60DTPXKSA1

IGBT 晶体管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.

IKW30N65H5XKSA1

IGBT 晶体管 Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e

IRL40B209

MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl

IPD042P03L3GATMA1

MOSFET SMALL SIGNAL+P-CH